Integration of a double-polysilicon emitter-base self-aligned bipolar transistor into a 0.5-μm BiCMOS technology for fast 4-Mb SRAM's

✍ Scribed by Hayden, J.D.; Burnett, J.D.; Perera, A.K.; Mele, T.C.; Walczyk, F.W.; Kaushik, V.; Lage, C.S.; See, Y.-C.

• Book ID: 114535140
• Publisher: IEEE
• Year: 1993
• Tongue: English
• Weight: 900 KB
• Volume: 40
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.214738