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Integrated photocapacitive position-sensitive detector made in CMOS technology

✍ Scribed by W.-D. Schmidt; H. Ahlers; V. Helmig; R. Bohrisch; J. Boldt

Publisher: Elsevier Science
Year: 1993
Tongue: English
Weight: 727 KB
Volume: 39
Category: Article
ISSN: 0924-4247
DOI: 10.1016/0924-4247(93)80207-w

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✦ Synopsis

AtlStlXt

An Integrated photocapacItIve edge-detector consisting of a arcle+rrcular ring device and two charge-balancing converters IS described The integrated sensors are produced usmg a conventIonal 15 pm CMOS technology

The theoretIca background and design as well as the operatron are explamed Expenmental results of opbcal edge-detection show an accuracy of posmon detection of the centre of the sensor structure of about 2 pm

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