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Insulating substrates for cubic GaN-based HFETs

โœ Scribed by E. Tschumak; M.P.F. de Godoy; D.J. As; K. Lischka

Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
242 KB
Volume
40
Category
Article
ISSN
0026-2692

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## Abstract In this work, a comprehensive analytical model for AlGaN/GaN MISHFET has been presented to evaluate the drain current characteristics, transconductance, and cutโ€off frequency of the insulated device. The model takes into account polynomial dependence of sheet carrier density on position