๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Instrument for measuring thickness of epitaxial layers

โœ Scribed by S. I. Stolyarov; A. G. Efremenko; A. A. Galuzo; S. A. Spektor

Publisher
Springer US
Year
1977
Tongue
English
Weight
339 KB
Volume
20
Category
Article
ISSN
0543-1972

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Influence of Profile Parameters on the I
Influence of Profile Parameters on the IR Thickness Measurement of Thin Silicon Epitaxial Layers
โœ Dipl.-Ing. Ch. Quick; Dr. E. Hild; Dr.-Ing. P. Schley; Dr.-Ing. J. Quick ๐Ÿ“‚ Article ๐Ÿ“… 1991 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 323 KB ๐Ÿ‘ 2 views

For IR thickness measurements of very thin silicon epitaxial layers (dep, < 3 pm) on silicon substrate the influence of the concentration profile of free carriers in the whole system is not negligible. The effects of most important profile parameters on the IR reflectance spectrum of silicon epitaxi