𝔖 Bobbio Scriptorium

✦ LIBER ✦

[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - Yokohama, Japan (23-25 May 1995)] Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - The soot deposited integrated circuit substrate of 6 inches diameter for high voltage ICs, improved in durability against the pressure cooker test

✍ Scribed by Anno, T.; Katsuki, S.; Unno, H.; Yokota, M.; Sawada, R.; Fujii, I.; Shimizu, M.

Book ID: 126745097
Publisher: Inst. Electr. Eng. Japan
Year: 1995
Weight: 390 KB
Category: Article
ISBN-13: 9780780326187
DOI: 10.1109/ISPSD.1995.515053

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

[Inst. Electr. Eng. Japan International

[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - Yokohama, Japan (23-25 May 1995)] Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - The dual-gate BRT

✍ Kurlagunda, R.; Baliga, B.J. 📂 Article 📅 1995 🏛 Inst. Electr. Eng. Japan ⚖ 418 KB

[Inst. Electr. Eng. Japan International

[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - Yokohama, Japan (23-25 May 1995)] Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - Integral diodes in lateral DI power devices

✍ Sunkavalli, R.; Baliga, B.J. 📂 Article 📅 1995 🏛 Inst. Electr. Eng. Japan ⚖ 627 KB

[Inst. Electr. Eng. Japan International

[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - Yokohama, Japan (23-25 May 1995)] Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - A combined power transistor structure for improved switching performances

✍ Kang Baowei, ; Wu Yu, 📂 Article 📅 1995 🏛 Inst. Electr. Eng. Japan ⚖ 285 KB

[Inst. Electr. Eng. Japan International

[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - Yokohama, Japan (23-25 May 1995)] Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - Efficient power Schottky rectifiers of 4H-SiC

✍ Itoh, A.; Kimoto, T.; Matsunami, H. 📂 Article 📅 1995 🏛 Inst. Electr. Eng. Japan ⚖ 525 KB

[Inst. Electr. Eng. Japan International

[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - Yokohama, Japan (23-25 May 1995)] Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - High-efficiency performance of microwave power 4H-SiC amplifiers

✍ Shin, M.W.; Kordas, T.J.; Trew, R.J. 📂 Article 📅 1995 🏛 Inst. Electr. Eng. Japan ⚖ 221 KB

[Inst. Electr. Eng. Japan International

[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - Yokohama, Japan (23-25 May 1995)] Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - Synchronous rectifiers using new structure MOSFET

✍ Fukumochi, Y.; Suga, I.; Ono, T. 📂 Article 📅 1995 🏛 Inst. Electr. Eng. Japan ⚖ 443 KB