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[Inst. Electr. Eng. Japan 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 - Osaka, Japan (4-7 June 2001)] Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216) - A 700 V lateral power MOSFET with narrow gap double metal field plates realizing low on-resistance and long-term stability of performance

✍ Scribed by Fujishima, N.; Saito, M.; Kitamura, A.; Urano, Y.; Tada, G.; Tsuruta, Y.

Book ID: 118212936
Publisher: Inst. Electr. Eng. Japan
Year: 2001
Tongue: Japanese
Weight: 374 KB
Volume: 0
Category: Article
ISBN-13: 9784886860569
DOI: 10.1109/ispsd.2001.934603

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