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InP-based AllnAs/GaAs0.51Sb0.49/GaInAs single heterojunction bipolar transistor for high-speed and RF wireless applications

✍ Scribed by Changhyun Yi; Tong-Ho Kim; April S. Brown


Book ID
107452820
Publisher
Springer US
Year
2002
Tongue
English
Weight
135 KB
Volume
31
Category
Article
ISSN
0361-5235

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