SIMS with sample rotation: an experiment
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Sykes, D. E.
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Article
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1999
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John Wiley and Sons
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English
β 537 KB
The application of sample rotation during SIMS analysis of practical samples is described. It is shown that sample rotation gives improved depth resolution in profiles of metal layers on flat semiconductor substrates, allowing thin interfacial layers to be identified. For thick metal layers on non-i