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InGaP/InGaAsP/GaAs 0.808 /spl mu/m separate confinement laser diodes grown by metalorganic chemical vapor deposition

✍ Scribed by Diaz, J.; Eliashevich, I.; Mobarhan, K.; Kolev, E.; Wang, L.J.; Garbuzov, D.Z.; Razeghi, M.

Book ID: 119784158
Publisher: IEEE
Year: 1994
Tongue: English
Weight: 260 KB
Volume: 6
Category: Article
ISSN: 1041-1135
DOI: 10.1109/68.275405

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