InGaP/InAlAs/InGaAs HEMT using a Pt-based Schottky gate

✍ Scribed by M. Amano; S. Fujita; S. Hosoi; T. Noda; A. Sasaki; Y. Ashizawa

• Publisher: John Wiley and Sons
• Year: 1996
• Tongue: English
• Weight: 416 KB
• Volume: 11
• Category: Article
• ISSN: 0895-2477
• DOI: 10.1002/(sici)1098-2760(19960220)11:3<128::aid-mop5>3.0.co;2-n

✦ Synopsis

Figure 7

The output characteristic of type 8 ML