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InGaN/GaN multiple-quantum well heterostructures for solar cells grown by MOVPE: case studies

✍ Scribed by Mukhtarova, Anna; Valdueza-Felip, Sirona; Durand, Christophe; Pan, Qing; Grenet, Louis; Peyrade, David; Bougerol, Catherine; Chikhaoui, Walf; Monroy, Eva; Eymery, Joël

Book ID: 120221484
Publisher: John Wiley and Sons
Year: 2012
Tongue: English
Weight: 463 KB
Volume: 10
Category: Article
ISSN: 1862-6351
DOI: 10.1002/pssc.201200682

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## Abstract The structural investigation of InGaN/GaN:Si multiple quantum well (MQW) samples grown by low‐pressure metal‐organic vapor phase epitaxy (LP‐MOVPE) in a two temperatures (2__T__) process on high‐pressure GaN mono‐crystalline substrates is performed by transmission electron microscopy (T