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InGaAsSb(Gd)/InAsSbP double heterostructure lasers (λ=3.0–3.3 µm) for diode laser spectroscopy

✍ Scribed by M. Aidaraliev; T. Beyer; N. V. Zotova; S. A. Karandashev; B. A. Matveev; M. A. Remennyi; N. M. Stus’; G. N. Talalakin

No coin nor oath required. For personal study only.

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