We have characterized self-assembled InAs quantum dots grown on the top of a single InGaAs/GaAs quantum well (QD's:QW) by measuring photoluminescence (PL) spectra as an effective technique. We have found that the linewidths of the PL peaks for the QD's:QW are narrower than that for the InAs quantum
✦ LIBER ✦
InGaAs/GaAs quantum-dot–quantum-well heterostructure formed by submonolayer deposition
✍ Scribed by Xu, Zhangcheng; Leosson, Kristjan; Birkedal, Dan; Lyssenko, Vadim; Hvam, Jørn M; Sadowski, Janusz
- Book ID
- 120496775
- Publisher
- Institute of Physics
- Year
- 2003
- Tongue
- English
- Weight
- 192 KB
- Volume
- 14
- Category
- Article
- ISSN
- 0957-4484
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