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InGaAs-GaAs quantum dots for application in long wavelength (1.3 µm) resonant vertical cavity enhanced devices

✍ Scribed by M. V. Maximov; I. L. Krestnikov; Y. M. Shernyakov; A. E. Zhukov; N. A. Maleev; Y. G. Musikhin; V. M. Ustinov; Zh. I. Alferov; A. Y. Chernyshov; N. N. Ledentsov; D. Bimberg; T. Maka; C. M. Sotomayor Torres


Book ID
107452390
Publisher
Springer US
Year
2000
Tongue
English
Weight
483 KB
Volume
29
Category
Article
ISSN
0361-5235

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Long-wavelength (λ≥ 1.3 µm) InGaAlAs-InP
✍ Amann, Markus-Christian ;Ortsiefer, Markus 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 324 KB

## Abstract In this paper we present an overview of the properties and applications of long‐wavelength vertical‐cavity surface‐emitting lasers (VCSELs) based on the InGaAlAs–InP material system. With respect to significant temperature sensitivity of active material gain as well as insufficient ther