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Infrared Study of Hydrogen in Ultra-Thin Silicon Nitride Films Using Multiple Internal Reflection Spectroscopy (MIR) in 200 mm Silicon Wafers

✍ Scribed by Olivier, M. ;Martin, F. ;Chabli, A. ;Lefeuvre, G. ;Conne, F. ;Rochat, N.

Publisher: John Wiley and Sons
Year: 1999
Tongue: English
Weight: 191 KB
Volume: 175
Category: Article
ISSN: 0031-8965
DOI: 10.1002/(sici)1521-396x(199909)175:1<137::aid-pssa137>3.0.co;2-m

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✦ Synopsis

We discuss the usefulness of the two-prism coupling geometry to perform non-destructive multiple internal reflection (MIR) measurements on 200 mm silicon wafers. Application to the determination of the Si±H and N±H bond concentrations in LPCVD SiN ultra-thin films, is presented. It is shown that an appropriate annealing reduces significantly the Si±H content.