In this work we have studied the influence of thermal annealing on the structural and electrical properties of W-Ti thin films, deposited on n-type (100) silicon wafers. The films were deposited by d.c. sputtering from a 90:10 wt.% W-Ti target, using Ar ions, to a thickness of ~170 nm. After deposit
✦ LIBER ✦
Influences of film composition and annealing on the mechanical and electrical properties of W–Mo thin films
✍ Scribed by Takahiro Namazu; Naoto Maruo; Shozo Inoue
- Publisher
- Springer
- Year
- 2011
- Tongue
- English
- Weight
- 431 KB
- Volume
- 47
- Category
- Article
- ISSN
- 0022-2461
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