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Influence of threading dislocations on the properties of InGaN-based multiple quantum wells

✍ Scribed by H.B. Yu; H. Chen; Dongsheng Li; J. Wang; Z.G. Xing; X.H. Zheng; Q. Huang; J.M. Zhou

Book ID
108165775
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
309 KB
Volume
266
Category
Article
ISSN
0022-0248

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