Influence of thermal boundary resistance on bolometric response of high-Tc superconducting films

✍ Scribed by Jhy-Ping Wu; Chia-Hung Shih; Hsin-Sen Chu

• Book ID: 104111473
• Publisher: Elsevier Science
• Year: 1998
• Tongue: English
• Weight: 351 KB
• Volume: 38
• Category: Article
• ISSN: 0011-2275
• DOI: 10.1016/s0011-2275(98)00017-4

✦ Synopsis

This work presents a thermal analysis on predicting the temperature increase and the voltage response of high-T c superconducting bolometers. To consider the thermal boundary resistance between film and substrate, an acoustic mismatch model (AMM), a diffusive mismatch model (DMM), and an interfacial layer model (ILM) are employed. The thermal boundary resistance significantly influences the voltage response. Additionally, several common substrates are examined. SrTiO 3 (100) or LaAlO 3 (100) is a better substrate for high-T c superconducting bolometers. Furthermore, we demonstrated that there are several factors to affect the voltage response, such as the pulse duration for a constant total incident energy or a fixed highest incident heat flux, the pulse distribution function in time, optical penetration depth, the thermal conductivities of the film and substrate, initial operating temperature, thickness ratio, and the amount of incident heat flux. One interesting finding was that when compared with experimental data, all the theoretical values from the present study as well as the other previously theoretical treatment overestimate the voltage response near the transition temperature.