Influence of the substrate temperature on the photoelectric properties of HOMOCVD a-Si:H

✍ Scribed by Tzv. Mihailova; A. Toneva

• Publisher: Elsevier Science
• Year: 1995
• Tongue: English
• Weight: 375 KB
• Volume: 36
• Category: Article
• ISSN: 0927-0248
• DOI: 10.1016/0927-0248(94)00159-p

✦ Synopsis

Conductivity and photoconductivity measurements of hydrogenated amorphous silicon (a-Si : H) prepared by homogeneous chemical vapor deposition (HOMOCVD) are reported. The conductivity activation energy (E a) has been varied by changing the substrate temperature. It was found that the conductivity of HOMOCVD a-Si:H follows the Meyer-Neldel rule. The fundamental characteristics G = 31 eV-1 and ~r00 = 2.10 -4 (~.cm)-1 have been calculated. The values determined correspond to a very low gap state density for HO-MOCVD a-Si:H. The relations between Ea, photoconductivity (trph), photosensitivity (trph/~a), and the optical Tauc parameter B have been demonstrated. The shift of the Fermi level towards E c has been established in dependence of the substrate temperature.