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Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures

✍ Scribed by Keller, S.; Suh, C. S.; Fichtenbaum, N. A.; Furukawa, M.; Chu, R.; Chen, Z.; Vijayraghavan, K.; Rajan, S.; DenBaars, S. P.; Speck, J. S.; Mishra, U. K.

Book ID: 120051539
Publisher: American Institute of Physics
Year: 2008
Tongue: English
Weight: 766 KB
Volume: 104
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.3006132

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