✦ LIBER ✦
Influence of the sidewall crystal orientation, HfSiO nitridation and TiN metal gate thickness on n-MuGFETs under analog operation
✍ Scribed by M. Rodrigues; M. Galeti; J.A. Martino; N. Collaert; E. Simoen; C. Claeys
- Book ID
- 108271862
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 640 KB
- Volume
- 62
- Category
- Article
- ISSN
- 0038-1101
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