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Influence of the Langmuir Probe Shaft on Measuring Plasma Parameters

✍ Scribed by O. Waldmann; G. Fussmann

Publisher
John Wiley and Sons
Year
2008
Tongue
English
Weight
173 KB
Volume
48
Category
Article
ISSN
0005-8025

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For IR thickness measurements of very thin silicon epitaxial layers (dep, < 3 pm) on silicon substrate the influence of the concentration profile of free carriers in the whole system is not negligible. The effects of most important profile parameters on the IR reflectance spectrum of silicon epitaxi