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Influence of the initial boron doping level on the boron atom distribution arising as a result of heat treatment in silicon implanted with boron ions

✍ Scribed by V. I. Obodnikov; E. G. Tishkovskii


Book ID
110119776
Publisher
Springer
Year
1998
Tongue
English
Weight
69 KB
Volume
32
Category
Article
ISSN
1063-7826

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