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Influence of the epitaxial layer on the current-voltage characteristics in high voltage VDMOS devices. Analysis of the quasi-saturation point

✍ Scribed by J Rebollo; J Millán; J Paredes; E Lora-Tamayo; F Serra-Mestres


Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
274 KB
Volume
37
Category
Article
ISSN
0042-207X

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