Influence of the epitaxial layer on the current-voltage characteristics in high voltage VDMOS devices. Analysis of the quasi-saturation point

✍ Scribed by J Rebollo; J Millán; J Paredes; E Lora-Tamayo; F Serra-Mestres

• Publisher: Elsevier Science
• Year: 1987
• Tongue: English
• Weight: 274 KB
• Volume: 37
• Category: Article
• ISSN: 0042-207X
• DOI: 10.1016/0042-207x(87)90320-4