Thin films of TiN, with 0.34 < x < 1.19 were deposited on silicon substrates by a filtered arc deposition process. Spectroscopic ellipsometry (SE) in the energy region 1.5-3.5 eV was used to measure the optical properties of the films. X-ray photoelectron spectroscopy (XPS) was used to determine the
✦ LIBER ✦
Influence of the deposition parameters on the composition, structure and X-ray photoelectron spectroscopy spectra of TiN films
✍ Scribed by M.V. Kuznetsov; M.V. Zhuravlev; E.V. Shalayeva; V.A. Gubanov
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 659 KB
- Volume
- 215
- Category
- Article
- ISSN
- 0040-6090
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