Influence of the charge carriers recombination and generation at the surface of the depletion layer on the static characteristic of the silicon p-n junction: Jerzy Pultorak. Electron Technol., Warsaw15(1/2), 117 (1982)

• Publisher: Elsevier Science
• Year: 1986
• Tongue: English
• Weight: 114 KB
• Volume: 26
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(86)90910-8