✦ LIBER ✦

Influence of the carrier diffusion process on the transient response of vertical-cavity surface-emitting lasers

✍ Scribed by M. S. Torre; H. F. Ranea-Sandoval

Publisher: John Wiley and Sons
Year: 2003
Tongue: English
Weight: 173 KB
Volume: 16
Category: Article
ISSN: 0894-3370
DOI: 10.1002/jnm.480

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✦ Synopsis

Abstract

We investigate the transverse mode dynamics of weakly index‐guided vertical‐cavity surface‐emitting lasers (VCSEL). The turn‐on time of transverse modes are calculated by implementing a model for the VCSEL dynamics including diffusion and transport/capture phenomena. It takes into account the spatial dependence of the two carrier density profiles associated with the confined carriers in the quantum wells, and with the unconfined carriers in the barrier region. Devices of different aperture diameter under different excitation conditions are also studied. The model displays the correct turn‐on time dependence on the injection current density when compared with the experimental data available. We show that the turn‐on time of the modes increases when capture time increases and escape time decreases and also when diffusion increases. Copyright © 2002 John Wiley & Sons, Ltd.

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