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Influence of the annealing field strength on exchange bias and magnetoresistance of spin valves with IrMn

✍ Scribed by Kerr, Emma; van Dijken, Sebastiaan; Coey, J. M. D.

Book ID
125930739
Publisher
American Institute of Physics
Year
2005
Tongue
English
Weight
597 KB
Volume
97
Category
Article
ISSN
0021-8979

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## Abstract The influence of seed‐buffer layers on the texture and tunneling parameters was investigated. The spin valve magnetic tunnel junctions (SV‐MTJs) were deposited onto thermally oxidized Si wafers by magnetron sputtering in the following sequence of layers: substrate Si(100)/SiO~2~ 47 nm/b