The influence of interdiffusion on eigenstates in an interdiffusion-induced GaAs/ AIxGal\_xAs single-quantum-well structure is analysed numerically by the finite element method. In this approach, the confinement potential profile of the interdiffused quantum well structure is nonlinear and is modell
Influence of the AlAs mode fraction on the luminescence efficiency of GaAsAlxGa1−xAs quantum well structures
✍ Scribed by D. Sun; E. Towe; R.H. Henderson
- Book ID
- 107864460
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 343 KB
- Volume
- 248
- Category
- Article
- ISSN
- 0040-6090
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