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Influence of Substrate Temperature and Post-Deposition Annealing on Material Properties of Ga-Doped ZnO Prepared by Pulsed Laser Deposition

✍ Scribed by Robin C. Scott; Kevin D. Leedy; Burhan Bayraktaroglu; David C. Look; David J. Smith; Ding Ding; Xianfeng Lu; Yong-Hang Zhang

Book ID: 107457060
Publisher: Springer US
Year: 2010
Tongue: English
Weight: 934 KB
Volume: 40
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-010-1396-9

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## Abstract InAs co‐doped ZnO films were grown on sapphire substrates by pulsed laser deposition. The grown films have been characterized using X‐ray diffraction (XRD), Hall effect measurements, Atomic force microscope (AFM) and Field emission scanning electron microscope (FESEM) in order to invest