𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Influence of strain on lasing performances of Al-free strained-layer Ga(In)As(P)-GaInAsP-GaInP quantum-well lasers emitting at 0.78<λ<1.1 μm

✍ Scribed by Guodong Zhang

Book ID
117865756
Publisher
IEEE
Year
1995
Tongue
English
Weight
593 KB
Volume
1
Category
Article
ISSN
1077-260X

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Short-Wavelength (λ ≈ 3.6 μm) In0.73Ga0.
Short-Wavelength (λ ≈ 3.6 μm) In0.73Ga0.27Asndash;AlAsndash;InP Quantum-Cascade Laser Semtsiv, M. P.; Dressler, S.; Masselink, W. T. Quantum Electronics, IEEE Journal of Volume: 43 , Issue: 1 Digital Object Identifier: 10.1109/JQE.2006.884577 Publication Year: 2007 , Page(s): 42 - 46 IEEE Journals & Magazines Quick Abstract | PDF (476 KB) We describe the design and implementation of a short-wavelength quantum-cascade laser emitting in the range of 3.6-3.7 mum at 77 K and in the range of 3.8-3.9 mum at 300 K. The shortest wavelength laser emission observed at 77 K is lambda=3.62 mum. The active region is based on the strain-compensated In0.73Ga0.27As-AlAs heterosystem on InP. The laser operates in pulsed mode up to 300 K, and in continuous-wave mode at 77 K. Laser threshold current densities are as low as
✍ Connelly, M. J. 📂 Article 📅 2007 🏛 IEEE 🌐 English ⚖ 477 KB