Influence of process parameters on CNX films obtained by laser-CVD at two wavelengths
✍ Scribed by R. Cireasa; A. Crunteanu; R. Alexandrescu; I. Morjan; C. Martin; I.N. Mihailescu; G. Oncioiu
- Publisher
- Elsevier Science
- Year
- 1998
- Tongue
- English
- Weight
- 563 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0008-6223
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✦ Synopsis
The carbon nitride (CN,) films have been prepared by infrared (IR; at 10.6 pm) and ultraviolet (at 248 nm) laser induced chemical vapour deposition (CVD) using different ethylene/nitrous oxide/ammonia mixtures. The partial concentration of ammonia in mixtures was varied in order to obtain a higher nitrogen incorporation in the deposited films. The changes induced in the gas-phase composition by the laser radiation in different experimental conditions were determined by IR transmission measurements. The film composition was studied by X-ray photoelectron spectroscopy. The modification of the film chemical composition, specifically the dependence of the N/C ratio, on the irradiation wavelength and on the reactants composition is described for the first time.