Influence of PrBa2Cu3−xGaxO7 barrier material on electrical behaviour of ramp-type Josephson junctions

✍ Scribed by M.A.J. Verhoeven; Yu.M. Boguslavskij; E.M.C.M. Reuvekamp; G.J. Gerritsma; H. Rogalla

• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 156 KB
• Volume: 194-196
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/0921-4526(94)91002-2

✦ Synopsis

The use of PrBa2CU3.xGaxO 7 barrier material with increased resistivity by Ga doping (x=0; 0.05 and 0.1) in ramp-type DyBa2Cu3OT/PrBa2Cu3.xGaxOT/DyBa2Cu307 Josephson junctions has been investigated. All junctions have been fabricated with very smooth sputtered films and show good RSJ-like I-V characteristics with clear Josephson behaviour. Both critical current Ic and normal state resistance R, are influenced by the doping level as well as the barrier thickness. The temperature dependence of the normal state resistance at different Ga doping levels and barrier thicknesses will be discussed.