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Influence of photoluminescence and trapping on the photovoltage at the por-Si/p-Si structure

✍ Scribed by V.Yu Timoshenko; P.K Kashkarov; A.B Matveeva; E.A Konstantinova; H Flietner; Th Dittrich

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
347 KB
Volume
276
Category
Article
ISSN
0040-6090

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This work presents a detailed study of the subgrain structure of Si doped GaN grown on AlN buffered (111)Si substrates by plasma-assisted Molecular Beam Epitaxy. Si doping increases from an unintentionally undoped sample up to 1.7 Γ‚ 10 19 cm -3 . The subgrain size distribution fits quite precisely a