𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Influence of oxygen content on structure and hardness of Cr–N–O thin films prepared by pulsed laser deposition

✍ Scribed by Tsuneo Suzuki; Jun Inoue; Hajime Saito; Makoto Hirai; Hisayuki Suematsu; Weihua Jiang; Kiyoshi Yatsui

Book ID
108289399
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
364 KB
Volume
515
Category
Article
ISSN
0040-6090

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Structure and dielectric properties of Z
Structure and dielectric properties of Zr–Al–O thin films prepared by pulsed laser deposition
✍ J. Zhu; Z.G. Liu 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 147 KB

Zr-Al-O dielectric films have been deposited on Pt-coated silicon substrates and directly on n-type Si substrates, respectively, by pulsed laser deposition technique using a (ZrO ) (Al O ) ceramic target. The 2 0.5 2 3 0.5 Zr-Al-O films deposited in 20 Pa oxygen ambient at 300 8C substrate temperat

Influence of laser energy on the crystal
Influence of laser energy on the crystallization of Ge2Sb2Te5 thin film prepared by pulsed laser deposition
✍ Hu, D. Z. ;Pan, F. M. ;Lu, X. M. ;Zhu, J. S. 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 371 KB

## Abstract Four Ge~2~Sb~2~Te~5~ thin films were prepared by pulsed laser deposition (PLD) at 58, 100, 140, and 190 mJ/pulse laser energy, respectively. The influence of laser energy on the crystallization of Ge~2~Sb~2~Te~5~ was investigated. The result shows that laser energy has evident effect on