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Influence of Ni doping on the electrical and structural properties of FeSb2

โœ Scribed by J. Janaki; Awadhesh Mani; A. T. Satya; T. Geetha Kumary; S. Kalavathi; A. Bharathi


Book ID
112181176
Publisher
John Wiley and Sons
Year
2012
Tongue
English
Weight
553 KB
Volume
249
Category
Article
ISSN
0370-1972

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Influence of iodine doping on the electr
โœ V. Augelli; A.M. Mancini; R. Murri; R. Piccolo; A. Rizzo; L. Vasanelli ๐Ÿ“‚ Article ๐Ÿ“… 1979 ๐Ÿ› Elsevier Science โš– 283 KB

Systematic measurements of resistivity and mobility at room temperature have been carried out on GaSe samples, doped with different iodine conccntrations, in order to investigate the influence of iodine doping on the electrical properties of GaSe. To this purpose a series of GaSe single crystals hav