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Influence of mole fraction on normal incidence bound‐free absorption in p‐doped InxGa1-xAs/GaAs strained quantum wells

✍ Scribed by Tadic, M.; Ikonic, Z.


Book ID
119942307
Publisher
American Institute of Physics
Year
1996
Tongue
English
Weight
417 KB
Volume
68
Category
Article
ISSN
0003-6951

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