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Influence of laser fluence and dopant gas pressure on properties of photochemical doping of Si into GaAs using XeCl excimer Laser

✍ Scribed by K. Sugioka; K. Toyoda

Book ID
104840494
Publisher
Springer
Year
1988
Tongue
English
Weight
315 KB
Volume
45
Category
Article
ISSN
1432-0630

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