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Influence of ionization processes on radiation defect formation

✍ Scribed by C. Ascheron; J.P. Biersack; P. Goppelt-Langer; J. Erxmeyer

Book ID
113284610
Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
251 KB
Volume
80-81
Category
Article
ISSN
0168-583X

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The influence of p-dopants (Mg and Be) on the structure of GaN has been studied using Transmission Electron Microscopy (TEM). Bulk GaN : Mg and GaN : Be crystals grown by a high pressure and high temperature process and GaN : Mg grown by metal-organic chemical-vapor deposition (MOCVD) have been stud