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Influence of interface growth steps on the anisotropy of excitonic emission in ZnCdSe/ZnSe quantum wells

✍ Scribed by V. Kh. Kaĭbyshev; V. V. Travnikov

Book ID
111443510
Publisher
Springer
Year
2006
Tongue
English
Weight
251 KB
Volume
40
Category
Article
ISSN
1063-7826

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Photo-pumped lasing properties have been investigated in a CdSe/ZnSe/ZnSSE single quantum wells (SQWs) with the well-layer thickness (L W ) of 1, 2 and 3 monolayer (ML). At 20 K, the laser threshold for the SQW with L W = 1 ML was the lowest in spite of the smallest active layer thickness. The carri