✦ LIBER ✦
Influence of implantation of silicon and oxygen ions into a heteroepitaxial silicon layer on a sapphire substrate on the leakage currents ofn-channel transistors of CMOS IC SOS technology
✍ Scribed by A. A. Chistilin; A. A. Romanov; Yu. M. Moskovskaya; A. V. Ulanova
- Book ID
- 110215472
- Publisher
- Springer
- Year
- 2011
- Tongue
- English
- Weight
- 227 KB
- Volume
- 40
- Category
- Article
- ISSN
- 1063-7397
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