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Influence of implantation dose on the charge storage characteristics of MOS memory devices with low energy Si implanted gate oxides

✍ Scribed by E. Kapetanakis; P. Normand; D. Tsoukalas; K. Beltsios


Book ID
114155417
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
136 KB
Volume
61-62
Category
Article
ISSN
0167-9317

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