Influence of impact-ionization-induced instabilities on the maximum usable output voltage of Si-bipolar transistors

✍ Scribed by Rickelt, M.; Rein, H.-M.; Rose, E.

• Book ID: 114538633
• Publisher: IEEE
• Year: 2001
• Tongue: English
• Weight: 265 KB
• Volume: 48
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.915725