Influence of hydrogen on SiO2 thick film deposited by PECVD and FHD for silica optical waveguide

✍ Scribed by Y.T. Kim; S.M. Cho; Y.G. Seo; H.D. Yoon; Y.M. Im; D.H. Yoon

• Publisher: John Wiley and Sons
• Year: 2002
• Tongue: English
• Weight: 114 KB
• Volume: 37
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.200290000

✦ Synopsis

Influence of hydrogen on SiO 2 thick film deposited by PECVD and FHD for silica optical waveguide

Silicon dioxide(SiO 2 ) thick films have been deposited by plasma enhanced chemical vapor deposition(PECVD) and flame hydrolysis deposition(FHD). PECVD SiO 2 films were obtained at low temperatures(<350°C) by the decomposition of the appropriate mixture of (SiH 4 +N 2 O) gases under suitable rf power and N 2 O/SiH 4 ratio. For low N 2 O/SiH 4 ratio, a refractive index(n) value close to 1.50 is obtained. The deposition rate increased with the increase of rf power. FHD SiO 2 films were produced by the flame hydrolysis reaction of halide materials such as SiCl 4 , POCl 3 and BCl 3 in an oxy-hydrogen torch. The porous SiO 2 layer, under the POCl 3 /BCl 3 ratio deposition condition, has to be consolidated by annealing at around 1300°C.