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Influence of growth conditions for GaAs quantum wells and composition fluctuations in Al(Ga)As barriers on exciton and electron localization

✍ Scribed by R Hey; M Ramsteiner; M Wassermeier; K.-J Friedland; B Jenichen; L Däweritz; K.H Ploog


Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
221 KB
Volume
2
Category
Article
ISSN
1386-9477

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