As-pressure influence on the surface cor
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E. Cruz-Hernández; S. Shimomura; M. López-López; D. Vázquez-Cortes; V.H. Méndez-
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Article
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2011
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Elsevier Science
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English
⚖ 458 KB
The achievement of defect-free and highly uniform semiconductor quantum wires is a projected goal with many potential applications. In this article, we report on the homoepitaxy of GaAs on (6 3 1)A-oriented substrates grown by molecular beam epitaxy (MBE) as a function of the As 4 pressure (P As ).