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Influence of electromagnetic fluctuations on the resonant tunneling of electrons

โœ Scribed by H.T. Imam; V.V. Ponomarenko; D.V. Averin


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
822 KB
Volume
210
Category
Article
ISSN
0921-4526

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The effects of the off-set energy between the dielectric films which are formed at the both edges of the channel and the Si substrate on the electrical characteristics are examined for the Si resonant tunneling MOST (SRTMOST). The barrier height of the dielectric films has a great influence on the o