Influence of Dopants on the Thermal Conductance of GaN–Sapphire Interface
✍ Scribed by Zheng, H.; Jagannadham, Kasichainula
- Book ID
- 120607570
- Publisher
- IEEE
- Year
- 2013
- Tongue
- English
- Weight
- 259 KB
- Volume
- 60
- Category
- Article
- ISSN
- 0018-9383
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
The influence of p-dopants (Mg and Be) on the structure of GaN has been studied using Transmission Electron Microscopy (TEM). Bulk GaN : Mg and GaN : Be crystals grown by a high pressure and high temperature process and GaN : Mg grown by metal-organic chemical-vapor deposition (MOCVD) have been stud
Having in mind to produce electrically conductive carbon-epoxy composite materials, we have filled an insulating epoxy resin with an electronic conducting polymer, polypyrrole (PPy). To select the PPy that best suits this process, various PPys were chemically synthesized. The syntheses were performe