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Influence of dislocation on magnetic domains in plastically deformed 3% Si-Fe

✍ Scribed by Caroni, C.; Manghi, E.; De Reca, N.

Book ID
117922106
Publisher
IEEE
Year
1973
Tongue
English
Weight
941 KB
Volume
9
Category
Article
ISSN
0018-9464

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## Abstract It is shown that after plastic deformation in clean conditions the most efficient recombination defects in Si are dislocation trails. The DLTS spectrum associated with the defects in the dislocation trails in p‐Si are revealed. The thermal annealing effect on the electrical properties o