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Influence of Diffused Boron Into MgO Barrier on Pinhole Creation in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions

✍ Scribed by Komagaki, K.; Hattori, M.; Noma, K.; Kanai, H.; Kobayashi, K.; Uehara, Y.; Tsunoda, M.; Takahashi, M.

Book ID
114653200
Publisher
IEEE
Year
2009
Tongue
English
Weight
332 KB
Volume
45
Category
Article
ISSN
0018-9464

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## Abstract The influence of seed‐buffer layers on the texture and tunneling parameters was investigated. The spin valve magnetic tunnel junctions (SV‐MTJs) were deposited onto thermally oxidized Si wafers by magnetron sputtering in the following sequence of layers: substrate Si(100)/SiO~2~ 47 nm/b